AOKS30B60D1 600v, 30a alpha igbt tm general description product summary v ce i c (t c =100c) 30a v ce(sat) (t c =25c) 2.0v applications 600v ? latest alpha igbt ( igbt) technology ? high efficient turn-on di/dt controllability ? very high switching speed ? low turn-off switching loss and softness ? very good emi behavior ? short-circuit ruggedness ? welding machines ? motor drives ? ups & solar inverters ? very high switching frequency applications g c top view to-247 symbol v ce v ge v ge spike v spike i cm i lm t sc t j , t stg t l symbol r q ja r q jc continuous collector current t c =25c 60 30 i c a parameter 20 v 96 a a 500ns 24 v 96 turn off soa, v ce 600v, limited by t jmax pulsed collector current, limited by t jmax gate-emitter voltage t c =100c w thermal characteristics 300 -55 to 150 208 c/w 40 83 c AOKS30B60D1 units m s t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d short circuit withstanding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =25c junction and storage temperature range t c =25c c/w 0.6 maximum igbt junction-to-case collector-emitter voltage 600 v units parameter absolute maximum ratings t a =25c unless otherwise noted AOKS30B60D1 maximum junction-to-ambient 10 e AOKS30B60D1 g c e rev.1.0: may 2015 www.aosmd.com page 1 of 7
symbol min typ max units bv ces collector-emitter breakdown voltage 600 - - v t j =25c - 2.0 2.5 t j =125c - 2.4 - t j =150c - 2.5 - v ge(th) gate-emitter threshold voltage - 5.6 - v t j =25c - - 10 t j =125c - - 400 t j =150c - - 2000 i ges gate-emitter leakage current - - 100 na g fs - 13 - s c ies - 1324 - pf c oes - 120 - pf c res - 5 - pf q g - 34 - nc q ge - 14.3 - nc q gc - 10.7 - nc i c(sc) - 96 - a r g - 1.3 - w t d(on) - 20 - ns t r - 44 - ns t d(off) - 58 - ns t f - 16 - ns e on - 1.1 - mj e off - 0.24 - mj e total - 1.34 - mj t d(on) - 21 - ns t r - 45 - ns t d(off) - 70 - ns t f - 19 - ns e on - 1.3 - mj e off - 0.46 - mj e total - 1.76 - mj this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime t j =150c v ge =15v, v ce =400v, i c =30a, r g =10 w, parasitic inductance = 150nh eon and etotal include diode(aok30b60d1) reverse recovery turn-on rise timeturn-off delay time turn-off fall time turn-on energy turn-off energy total switching energy turn-off energy turn-on rise time turn-on delaytime switching parameters, (load iductive, t j =150c) turn-off delay time t j =25c v ge =15v, v ce =400v, i c =30a, r g =10 w, parasitic i nductance=150nh eon and etotal include diode(aok30b60d1) reverse recovery total switching energy turn-off fall timeturn-on energy gate to collector charge gate to emitter charge v ge =15v, v ce =480v, i c =30a switching parameters, (load iductive, t j =25c) short circuit collector current, max. 1000 short circuits, delay betweenshort circuits 1.0s v ge =15v, v ce =400v, r g =25 w total gate charge gate resistance f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =30a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =30a v v ce =600v, v ge =0v collector-emitter saturation voltageoutput capacitance v ce =5v, i c =1ma input capacitance i ces zero gate voltage collector current dynamic parameters m a rev.1.0: may 2015 www.aosmd.com page 2 of 7
typical electrical and thermal characteristics 0 40 80 120 160 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 1: output characteristic (t j =25c) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 20 40 60 80 100 4 7 10 13 16 i c (a) v ge (v) 150 c 25 c -40 c 0 1 2 3 4 5 6 0 25 50 75 100 125 150 175 v ce(sat) (v) temperature ( c) i c =60a i c =15a i c =30a v ce =20v 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 2: output characteristic (t j =150c) v ge =7v 9v 20v 17 v 15v 11v 13v v ge (v) figure 3: transfer characteristic temperature ( c) figure 4: collector-emitter saturation voltage vs. junction temperature 2 3 4 5 6 7 8 0 30 60 90 120 150 v ge(th) (v) t j (c) figure 5: v ge(th) vs. t j rev.1.0: may 2015 www.aosmd.com page 3 of 7
typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 v ge (v) q g (nc) figure 6: gate-charge characteristics v ce =480v i c =30a 0 50 100 150 200 250 25 50 75 100 125 150 power disspation (w) t case ( c) 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) figure 7: capacitance characteristic c ies c res c ies c res c oes t case ( c) figure 9: power disspation as a function of case 0 10 20 30 40 50 60 25 50 75 100 125 150 current rating i c (a) t case (c) figure 10: current de-rating rev.1.0: may 2015 www.aosmd.com page 4 of 7
typical electrical and thermal characteristics 1 10 100 1000 0 10 20 30 40 50 60 70 switching time (ns) i c (a) figure 11: switching time vs. i c (t j =150c, v ge =15v, v ce =400v, r g =10 w ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 30 60 90 120 switching time (ns) r g ( w ) figure 12: switching time vs. r g (t j =150c, v ge =15v, v ce =400v, i c =30a) td(off) tf td(on) tr 1 10 100 1000 0 50 100 150 200 switching time (ns) td(off) tf td(on) tr 0 50 100 150 200 t j (c) figure 13: switching time vs.t j ( v ge =15v, v ce =400v, i c =30a, r g =10 w ) rev.1.0: may 2015 www.aosmd.com page 5 of 7
typical electrical and thermal characteristics 0 . 0 0.5 1.0 1.5 2.0 2.5 switching energy (mj) eoff eon etotal 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 switching energy (mj) r g ( w ) figure 15: switching loss vs. r g (t j =150c, v ge =15v, v ce =400v, i c =30a) eoff eon etotal 0 0.5 1 1.5 2 2.5 switching energy (mj) eoff eon etotal 0 2 4 6 8 0 10 20 30 40 50 60 70 switching energy (mj) i c (a) figure 14: switching loss vs. i c (t j =150c, v ge =15v, v ce =400v, r g =10 w ) eoff eon etotal 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 18 : normalized maximum transient thermal impedance fo r igbt d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0 . 0 200 250 300 350 400 450 500 v ce (v) figure 17: switching loss vs. v ce (t j =150c, v ge =15v, i c =30a, r g =10 w ) 0 25 50 75 100 125 150 175 t j (c) figure 16: switching loss vs. t j (v ge =15v, v ce =400v, i c =30a, r g =10 w ) rev.1.0: may 2015 www.aosmd.com page 6 of 7
figure a: gate charge test circuit & waveforms figure b: inductive switching test circuit & waveforms figure c: diode recovery test circuit & waveforms rev.1.0: may 2015 www.aosmd.com page 7 of 7
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